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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THBB1

Intervailey and electron-electron scattering rates measured in p-GaAs with hot electron luminescence

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Abstract

Recombination of a free electron at the conduction band minimum with a neutral acceptor causes the prominent (e,A0) luminescence peak near the band gap of p-GaAs, Although the resulting emission is orders of magnitude weaker, electrons well above the conduction band minimum can also radiatively recombine with neutral acceptors. At low optically injected densities, Mirlin et al.1 have shown that there is a rich oscillatory structure to this hot (e,A0) spectrum resulting from the cascade nature of the electron cooling by LO phonon emission.

© 1989 Optical Society of America

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