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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper JF3

Electrooptical properties of staggered alignment AlGaAs heterostructures

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Abstract

The unique electronic and optical properties of staggered-alignment heterostructures offer a range of potential electrooptic device applications. We have recently demonstrated that such structures can be fabricated in the well-characterized AlGaAs materials system. We present measurements of the electrooptic properties of staggered-alignment AlGaAs structures. These samples, grown by molecular beam epitaxy, have narrow GaAs layers so that the AlAs X minima provide the lowest energy excited states for electrons, while holes are confined to the GaAs heavy-hole valence band.

© 1989 Optical Society of America

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