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Strain Profile and Size Dependent Electronic Band Structure of GeSn/SiSn Quantum Dots for Optoelectronic Application

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Abstract

We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.

© 2014 Optical Society of America

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