Abstract

Room-temperature wafer bonded GaInP/GaAs/InGaAsP/InGaAs four-junction solar cell was fabricated. For application in space environments, the effect of 1-MeV electron irradiation was studied. After exposure to 1-MeV electron irradiation at 1×15 e/cm2, an end of life remaining factor of approximately 85% was obtained. The measurements of spectral response and transmission electron microscopy have been performed on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four-junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface.

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