Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

InGaAs/AlGaAs Quantum Dot Intermediate Band Solar Cells Fabricated on GaAs (311)B Substrate

Not Accessible

Your library or personal account may give you access

Abstract

We have fabricated multi-stacked InGaAs/AlGaAs quantum dot (QD) solar cells on GaAs (311)B substrate in order to clarify the structural, optical, and electrical properties of QDs which exhibit superior in-plane spatial ordering and the effect of a large energy band offset using AlGaAs matrix layer. It was confirmed that the QDs can be controlled in size and vertical alignment by changing the spacer layer thickness. The external quantum efficiency showed a clear increase in the longer wavelength range due to an additive contribution from the QD layers.

© 2017 Optical Society of America

PDF Article
More Like This
InAs/GaAs Quantum-Dot Intermediate-Band Solar Cells

A. J. Grenko, I. Kimukin, J. Walker, and E. Towe
SWA4 Solar Energy: New Materials and Nanostructured Devices for High Efficiency (Solar) 2008

Fabrication and characterization of intermediate band CdTe quantum dot solar cells

Vasilios Deligiannakis, Milan Begliarbekov, Piphat Cheng, Igor Kuskovsky, and Maria C Tamargo
PvF2D.3 Optical Devices and Materials for Solar Energy and Solid-state Lighting (SOLED) 2021

GaAs-Based InAs/InGaAs Quantum Dot Solar Cells for Concentration Applications

Kai Yang, Mohamed A. El-Emawy, Ting-yi Gu, Andreas Stintz, and Luke F. Lester
FMB4 Frontiers in Optics (FiO) 2009

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved