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Conferences > PV > 2015 > PTh3B > PTh3B.5

P- and N-type Surface Charge Transfer Doping of II-VI Group Semiconductor Nanostructures and Their Enhanced Optoelectronic Properties

Zhibin Shao, Zheng Sun, Feifei Xia, and Jiansheng Jie

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Abstract

II-VI group semiconductors possess superior optoelectronic properties, but usually present unipolar characteristic. It is expected to achieve and control bipolar doping of II-VI group semicondutors and enhance their optoelectronic properties.

© 2015 Optical Society of America

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