Abstract

Practical implementation of high-efficiency quantum dot intermediate band solar cells (QD-IBSCs) must be accompanied with sufficient photocurrent generation via IB states [1-9]. The demonstration of QD-IBSC is presently undergoing two stages. The first is to develop epitaxial growth and printing technologies to fabricate high density QD array and superlattice of low defect density which are placed in the active absorption layer of the solar cell. The second phase is to realize partially-filled or ideally half-filled IB states with carriers in order to maximize the photocurrent generation by two-step absorption of infrared photons of solar spectrum.

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