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Black Silicon by ICP-RIE and its prospects in photovoltaics

Martin Steglich, Thomas Käsebier, Matthias Zilk, Ernst-Bernhard Kley, and Andreas Tünnermann

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Abstract

Black Silicon fabricated by Inductively Coupled Plasma Reactive Ion Etching is presented as light-trapping structure for silicon-based photovoltaics. Its fabrication and optical properties (vanishing interface reflectance and increased NIR absorptance) is discussed.

© 2014 Optical Society of America

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