Abstract

Silicon nanostructures including silicon nanowires (SiNWs) are attracting intense interest as promising building blocks of next-generation, low-cost, high-performance Si-based photovoltaic devices since their unique geometries allow broadband optical absorption and high charge carrier collection efficiency even using less and lower quality Si. Recently, MCEE (i.e. metal-catalyzed electroless etching) approach featuring highly site-selective etching of silicon has been widely adopted to prepare silicon nanostructures due to its extreme ease and scalability. SiNWs arrays prepared by MCEE can strongly suppress reflectance over a broad spectral and are widely investigated as solar cell absorber. In this talk, I will discuss the recent achievements on MCEE technique and MCEE nanostructured silicon PV devices, along with the major scientific and technological challenges to cost-effective PV devices.

© 2013 Optical Society of America

PDF Article
More Like This
Purifying metallurgical silicon to solar grade silicon by metal-assisted chemical etching

Xiaopeng Li, Alexander Sprafke, Stefan Schweizer, and Ralf B. Wehrspohn
JM3A.8 Freeform Optics (Freeform) 2013

Silicon Nanostructures for Energy Applications

Shuit-Tong Lee
ASu1A.1 Advanced Optoelectronics for Energy and Environment (AOEE) 2013

Silicon Nanowires with controlled diameter for energy conversion applications

Sara Hussein, Nageh K. Allam, and Mohamed A. Swillam
FM3E.6 Frontiers in Optics (FiO) 2013