Abstract

Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.

© 2013 Optical Society of America

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More Like This
Passivation of optically black silicon wafers by atomic layer deposited Al2O3 films

Martin Otto, Matthias Kroll, Thomas Käsebier, Roland Salzer, Johannes Ziegler, Alexander Sprafke, and Ralf B. Wehrspohn
PW1B.3 Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2012

Tuneable Optical Properties in Al2O3/TiO2 Nanocomposites Fabricated by Atomic Layer Deposition (ALD)

Pallabi Paul, Golam Hafiz, Andreas Tünnermann, and Adriana Szeghalmi
NoM2C.4 Novel Optical Materials and Applications (NOMA) 2020

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M. Otto, M. Kroll, T. Käsebier, M. Ernst, R. Salzer, and R. B. Wehrspohn
JWE7 Optical Instrumentation for Energy and Environmental Applications (E2) 2011