Abstract

The two-step photocurrent generation in GaNAs/AlGaAs solar cells with different N concentrations is investigated. By incorporating a higher N concentration, a deep confinement of carriers was achieved. An additional photocurrent is generated by a two-step photo absorption process via the confined energy states. The bias dependence of this two-step photocurrent is discussed.

© 2012 Optical Society of America

PDF Article
More Like This
Efficient Two-Step Photon Absorption in Type-II GaSb Quantum Dot Solar Cells

Ryo Tamaki, Yasushi Shoji, and Yoshitaka Okada
PM2A.5 Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2017

InGaAs/AlGaAs Quantum Dot Intermediate Band Solar Cells Fabricated on GaAs (311)B Substrate

Ayaka Matsuoka, Yasushi Shoji, Ryo Tamaki, and Yoshitaka Okada
PM2A.6 Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2017

Large Area InGaN/GaN Nanowire Solar Cells on Silicon

Hieu Pham Trung Nguyen, Yukun Li, and Zetian Mi
CF2J.6 CLEO: Science and Innovations (CLEO_SI) 2012

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription