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Manipulation of In(Ga)N monolayer epitaxy by MBE

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Abstract

III-nitride semiconductors are key materials for light emitting devices. It is important to control the ordered arrangement in this kind of highly defective materials since they are hetero-epitaxial grown. In this talk, we will report our study on the manipulation of monolayer In(Ga)N by MBE, which will lead to ordered structure in InGaN alloys.

© 2015 Optical Society of America

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