Abstract
As a typical wide band gap semiconductor, ZnO is environmentally friendly and inexpensive, and has strong photogenerated hole oxidation ability. In addition, the electron mobility of ZnO is 10 to 100 times higher than that of TiO2, resulting in improved electron transfer efficiency [1]. However, the ZnO photoanode has low absorptance in visible region, due to the wide band gap (3.37 eV), which hinders its applications. To solve this problem, considerable efforts have been made, such as doping, sensitizing with quantum dots or dye, and construction of heterojunctions with other semiconductors. All these protocols have received tremendous attention as a means of boosting the efficiency in photovoltaic and photoelectrochemical (PEC) cells. Besides, the fabricated PEC photoanodes are further adopted in PEC self-powered biosensors that are highly promising due to their desirable biosensing performance.
© 2015 Optical Society of America
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