Abstract
We have grown Bi12GeO20 single crystals from melts of different GeO2 content. The absorption of the crystals increases with decreasing GeO2 content in the melt. Furthermore, the samples show a significant variation of the photoconductivity and the effective trap density. Our results can be described by a one-center model with the intrinsic antisite defect BiGe (Bi3+/4+ on Ge site associated with a hole) as dominant photorefractive center.
© 2001 Optical Society of America
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