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Electron Mobility in Dilute Nitride and Bismide Alloys of GaAs

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Abstract

Time-resolved terahertz spectroscopy is used to characterize the electronic properties of dilute nitride and bismide alloys of GaAs. While the nitride samples exhibit reduced mobility and carrier localization, the bismide mobility remains comparable to that of GaAs.

© 2007 Optical Society of America

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