Abstract

The realization of one-dimensional (1D) nanostructures, e.g. silicon nanowires (SiNWs) has opened up a new area for device applications in electronics, optoelectronics, thermoelectronics, photocatalysis, photovoltaics and sensing. Key issues for all device concepts based on SiNWs additional to the crystal structure, dopant concentrations and impurity levels are geometric properties like aspect ratio, pitch, alignment of SiNW with respect to the substrate etc. and the interfacial properties between the SiNW and the substrate as well as between the Si core and potential coatings.

© 2012 Optical Society of America

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