Relation of cathode voltage to stress for DC magnetron sputtered SiO2 films

D. W. Reicher; C. E. Sobczak

doi:10.1364/OIC.2004.ME3

Optical Interference Coatings
OSA Technical Digest Series (Optica Publishing Group, 2004),
paper ME3
•https://doi.org/10.1364/OIC.2004.ME3

Relation of cathode voltage to stress for DC magnetron sputtered SiO₂ films

D. W. Reicher and C. E. Sobczak

Optical Interference Coatings 2004

Tucson, Arizona United States
27 June–2 July 2004
ISBN: 3-5400-0364-9

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Deposition of Optical Coatings III (ME)

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D. W. Reicher and C. E. Sobczak, "Relation of cathode voltage to stress for DC magnetron sputtered SiO2 films," in Optical Interference Coatings, OSA Technical Digest Series (Optica Publishing Group, 2004), paper ME3.

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Abstract

This investigation explored the relation of cathode voltage to stress of magnetron sputtered SiO₂ films. Films deposited at potentials from 320 to 500 volts had corresponding film stresses of 195 MPa to 272 MPa.

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