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PRECISE MEASUREMENT METHOD FOR TRENCH DEPTH OF VLSI DRAMS CAPACITOR CELL BASED ON MICHELSON INTERFEROMETER

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Abstract

Major concern for developing several megabit DRAMs is reduction of the cell size without decreasing the cell capacitance. For this purpose, various types of vertical capacitor cells, such as the Corrugated Capacitor Cell (CCC)/l/ and the Isolation-Merged Vertical Capcitor (IVEC) Cell/2/ have been proposed. With the increase in using the vertical processing, requirement for a novel method to measure the trench depth without cleaving the silicon wafer has been greatly increased. In this paper a new method for measuring the trench depth accurately without damaging the silicon wafer is presented using a Michelson interferometer and fibers.

© 1986 Optical Society of America

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