Terabit interconnects with a 20-GHz O-band passively mode locked quantum dot laser grown directly on silicon

Xinru Wu; Songtao Liu; Daehwan Jung; Justin C. Norman; M. J. Kennedy; Hon Ki Tsang; Arthur C. Gossard; Arthur C. Gossard; Arthur C. Gossard; John E. Bowers; John E. Bowers; John E. Bowers

doi:10.1364/OFC.2019.W2A.3

Optical Fiber Communication Conference (OFC) 2019
OSA Technical Digest (Optica Publishing Group, 2019),
paper W2A.3
•https://doi.org/10.1364/OFC.2019.W2A.3

Terabit interconnects with a 20-GHz O-band passively mode locked quantum dot laser grown directly on silicon

Xinru Wu, Songtao Liu, Daehwan Jung, Justin C. Norman, M. J. Kennedy, Hon Ki Tsang, Arthur C. Gossard, and John E. Bowers

Optical Fiber Communication Conference 2019

San Diego, California United States
3–7 March 2019
ISBN: 978-1-943580-53-8

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Poster Session I (W2A)

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X. Wu, S. Liu, D. Jung, J. C. Norman, M. J. Kennedy, H. K. Tsang, A. C. Gossard, and J. E. Bowers, "Terabit interconnects with a 20-GHz O-band passively mode locked quantum dot laser grown directly on silicon," in Optical Fiber Communication Conference (OFC) 2019, OSA Technical Digest (Optica Publishing Group, 2019), paper W2A.3.

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Abstract

A 20-GHz passively mode-locked quantum dot laser directly grown on a silicon substrate is demonstrated as an on-chip wavelength division multiplexing (WDM) source for 4.1 Tb/s data transmission using 64 Nyquist WDM channels.

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