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56-Gbit/s Operations of Mach-Zehnder Modulators Using 300-µm-long Membrane InGaAsP Phase Shifters and SiN waveguides on Si

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Abstract

Mach-Zehnder modulators using 300-μm-long membrane phase shifters and SiN waveguides, in which InGaAsP core is buried with InP, are fabricated on Si. Devices exhibit 56-Gbit/s NRZ signal modulations with clear eye-openings.

© 2019 The Author(s)

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