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56 Gb/s Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode

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Abstract

Electro-absorption modulation of a heterogeneously integrated InP/Si DFB laser is demonstrated by reverse biasing the InP tapers, used to couple the light between the InP and the Si waveguides. Modulation at 56 Gb/s is demonstrated.

© 2017 Optical Society of America

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