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Conferences > OFC > 2017 > Th1A > Th1A.4

Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 μm

Yuan Dong, Wei Wang, Shengqiang Xu, Dian Lei, Xiao Gong, Shuh Ying Lee, Wan Khai Loke, Soon-Fatt Yoon, Gengchiau Liang, and Yee-Chia Yeo

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Abstract

We demonstrate a Ge0.9Sn0.1 multiple-quantum-well p-i-n photodiode on Si substrate with a cutoff wavelength beyond 2 μm. A record-low dark current density of 31 mA/cm2 at Vbias = −1 V is achieved.

© 2017 Optical Society of America

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