Abstract
This presentation reviews the progress towards the development of a new technology which relies on intersubband transitions in GaN/AlN nanostructures to achieve ultra-fast optoelectronic devices operating at telecommunication wavelengths.
© 2017 Optical Society of America
PDF ArticleMore Like This
S. Valdueza-Felip, F.B. Naranjo, M. González-Herráez, H. Fernández, J. Solis, F. Guillot, E. Monroy, M. Tchernycheva, L. Nevou, and F. H. Julián
ITuB7 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2008
D. T. H. Tan, D. K. T. Ng, K. J. A. Ooi, E. Sahin, G. F. R. Chen, J. W. Choi, B. U. Sohn, and P. Xing
31pON1 Optics and Photonics Japan (OPJ) 2017
Matias Katz, Ofir Sorias, Ben Dror, Nicolas Grandjean, Meir Orenstein, and Gad Bahir
JTu5A.75 CLEO: Applications and Technology (CLEO:A&T) 2017