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50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator

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Abstract

We report C-band waveguide-integrated GeSi electro-absorption modulators with 3dB-bandwidth beyond 50GHz. The DC extinction ratio is 4.2±0.3dB with 4.4±0.6dB insertion loss and the dynamic extinction ratio is 3.0dB at 50Gb/s NRZ-OOK with a 2V swing.

© 2016 Optical Society of America

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