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Ultra-low Loss CMOS Compatible Multi-Layer Si3N4-on-SOI Platform for 1310nm Wavelength

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Abstract

We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ~0.24dB/cm and ~0.2dB, respectively. We also characterized our SOI-based Ge photo-detector and silicon modulator at λ= 1310nm.

© 2015 Optical Society of America

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