Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Mid-Infrared Photonics

Not Accessible

Your library or personal account may give you access

Abstract

Group IV and III-V semiconductor photonic devices are prime candidates for photonic and opto-electronic (OEIC) applications in the 1.8 to 5.0 μm infrared wavelength range. Si-based active photonics in the GeSn/SiGeSn heterosystem (LDs, PDs, LEDs, amplifiers, EOMs) offers the Si CMOS “foundry advantage” for high-volume low-cost OEIC manufacture. Two MIR applications stand out: (1) deployment of GeSn SOI-based OEICs in a new “supplemental” global fiber-optic network at ~ 2 um wavelengths; (2) creation/deployment of GeSn-related photonic chem-bio-physical sensor OEICs (as well as night-vision-imaging chips) in hand-held tablets and smart phones. The new smart sensors will be part of a local or global network-of-sensors utilizing the “internet of things.”

© 2015 Optical Society of America

PDF Article
More Like This
Silicon Mid-Infrared Photonic Integrated Circuits

Richard Soref
IWE1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2011

Group IV Photonics for the Mid-Infrared

G. Z. Mashanovich, M. Nedeljkovic, J. Soler Penades, C. J. Mitchell, A. Z. Khokhar, C. J. Littlejohns, S. Stankovic, B. Troia, V. M. N. Passaro, L. Shen, N. Healy, A. C. Peacock, A. Ortega-Monux, G. Wanguemert-Perez, R. Halir, I. Molina-Fernandez, D. Benedikovic, G. S. Murugan, J. S. Wilkinson, P. Cheben, A. Villafranca, J. J. Ackert, A. P. Knights, D. J. Thomson, F. Y. Gardes, and G. T. Reed
IT3A.2 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2015

Mid-Infrared Silicon Photonics

Goran Z. Mashanovich
Tu3E.6 Optical Fiber Communication Conference (OFC) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved