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A WDM-Compatible 4 × 32-Gb/s CMOS-Driven Electro-Absorption Modulator Array

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Abstract

A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.

© 2015 Optical Society of America

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