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Conferences > OFC > 2012 > JTh2A > JTh2A.16

310GHz Gain-Bandwidth Product Ge/Si Avalanche Photodetector by Selective Epitaxial Growth

Ning Duan, Tsung-Yang Liow, Andy Eu-Jin Lim, Liang Ding, and G. Q. Lo

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Abstract

We report a normal incident Ge/Si avalanche photodiode by selective epitaxial growth. By eliminating germanium impact-ionization at high gain, high responsivity of 12A/W and large gain-bandwidth product of 310GHz have been achieved at 1550nm.

© 2012 Optical Society of America

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