Abstract
Metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction P-i-I-N photodiodes were fabricated on GaAs substrates and characterized. They exhibited a low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a ñ3 dB bandwidth of 38 GHz for 1.55 µm light.
© 2001 Optical Society of America
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