Abstract

AlGaInAs/InGaAs/InP MQW lasers are the most promising light sources for optical communication systems. Because the conduction-band discontinuity of MQW structures is larger that that of conventional InGaAsP-based MQW structures, enhanced quantum size effects are expected to result in improved highspeed and narrow-spectral-linewidth characteristics. However, there have been few reports on AlGaInAs-based lasers, and only limited-output-power performances have been reported^1–5 because of difficulties in material fabrication with Al-containing material and because of its poor crystal quality. In this paper we report what is to our knowledge the highest-power operation of 57 mW from strained AlGaInAs/InGaAs MQW buried-heterostructure (BH) lasers grown by MOVPE. A very high differential gain of 6.53 × 10−¹⁶ cm² and an a parameter of 1.5 are also reported.

© 1993 Optical Society of America