Abstract

Strained-layer quantum-well (QW) optoelectronic devices have greatly progressed recently.¹ The grown-in biaxial strain, compressive^2,3 as well as tensile,^4,5 modifies the valence subband structure, which results in a reduction both in the in-plane effective hole mass and in nonradiative recombinations, leading to enhanced device performance. In this paper the present state of the art of 1.3- and 1.5-µm-wavelength strained-layer InGaAs(P) QW semiconductor laser diodes (LD’s) and semiconductor laser amplifiers (SLA’s) for application in optical communication systems is reviewed.

© 1993 Optical Society of America