Abstract

A single-stage integrating front-end photoreceiver linear array of eight elements comprised of a P-I-N In_0.53Ga_0.47As photodiode integrated with a selectively regrown pseudomorphic In_0.65Ga_0.55AsIn_0.52Al_0.48As MODFET by using molecular-beam epitaxial (MBE) regrowth was investigated. Cutoff frequencies of the 1.0-µm regrown MODFET were f_t = 24 GHz and = 50 GHz. Transconductance of the regrown MODFET’s were as high as 495 mS/mm with a current density (I_ds) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit-rate sensitivity at 1 Gbit/s was -29.5 dBm for a BER of 10⁻⁹ with l.55-µm excitation, which is more than 4-dB greater sensitivity than that of other single-stage OEIC photoreceivers and within 1-2 dB of the best multiple-stage OEIC photoreceivers. The single-stage amplifier exhibited as much as 25 dB of flat- band photocurrent gain.

© 1993 Optical Society of America