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Optica Publishing Group
  • Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication
  • 1993 OSA Technical Digest Series (Optica Publishing Group, 1993),
  • paper ThB3
  • https://doi.org/10.1364/OFC.1993.ThB3

Threshold reduction of InGaAs/GaAlAs quantum-well lasers using AlAs/GaAs multi-layer distributed Bragg reflectors

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Abstract

Ultralow-threshold operation of semiconductor lasers has become necessary in order to apply them, for example, to optical parallel processing and large-scale optical interconnects. Several methods have been reported, including the introduction of GRIN-SCH,1 short-cavity,2 and high-reflectance mirrors with quantum wells.1 In this paper we demonstrate another design of optical confinement layers, i.e., the introduction of AlAs/GaAs multilayer distributed Bragg reflectors (DBR’s) for replacing the bulk cladding in the separate-confinement heterostructure (SQW-SCH) of InGaAs/ GaAlAs single-quantum-well stripe lasers.

© 1993 Optical Society of America

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