Abstract
Distributed feedback (DFB) or distributed Bragg reflector (DBR) tunable semiconductor lasers currently in the literature have a fractional tuning range Δλ/λ which is proportional to the fractional index change Δn/n that can be achieved in the grating region. This limits tuning to ~7 nm for fast electronic tuning,1 although use of thermal effects can extend this.2 Extending the tuning range further has to date required an external grating or compound cavity structure.3
© 1992 Optical Society of America
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