Abstract

It has been shown both theoretically^1,2 and experimentally^3-6 that the application of either biaxial tensile or compressive strain to the active layers of multiple quantum well (MQW) semiconductor lasers leads to enhanced performance including lower threshold current, higher quantum efficiency, and a reduced linewidth enhancement factor. In this paper, strained layer InGaAs(P)/InP MQW-FP and MQW-DFB lasers covering the wavelength ranges from 1.3 to 1.55 μm grown by low-pressure metalorganic vapor phase epitaxy are reported and show the expected improvement in the device performance due to strain.

© 1992 Optical Society of America