Abstract

Quantum-wire (QWR) semiconductor lasers are expected to show improved performance compared to conventional lasers owing to two-dimensional (2-D) quantum confinement of the charge carriers in their active region.^1,2 The improved features include very low threshold current (in the milliampere regime), reduced temperature sensitivity, higher modulation bandwidth, and narrower spectral linewidth.^1,2 The realization of these quasi-one-dimensional (quasi-1-D) laser structures, however, has been a major challenge for crystal-growth and semiconductor-fabrication technologies.

© 1991 Optical Society of America