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Broad wavelength tunability in gain-levered quantum-well semiconductor lasers

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Abstract

The gain-lever effect1,2 in a two-section quantum-well laser leads to a substantial enhancement of the efficiency of direct intensity modulation and frequency modulation (FM) without a corresponding increase in the intensity noise and frequency noise (linewidth).3,4 The large FM response results from the fact that the usual carrier clamping condition for a laser above threshold does not apply (although gain clamping still does) and leads to a very large range of variation in electron density. It has been pointed out that this should lead to a large wavelength tuning range.3 Indeed, it has been recently reported that a distributed-feedback (DFB) strained-quantum-well laser operated in the gain-levered mode can be tuned continuously over a 6.1-nm range at 1530 nm, the largest range reported to date.5 This paper examines the mechanisms responsible for broad wavelength tunability and the conditions necessary to achieve it.

© 1991 Optical Society of America

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