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Long-wavelength InGaAs/lnGaAsP strained-layer multiple-quantum-well lasers

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Abstract

Currently, strained-layer (SL) InxGa1-xAs/InP quantum-well (QW) lasers emitting at 1.5-µm wavelength are extensively studied. The interest for SL-QW's in this wavelength region lies primarily in the predicted dramatic improved performance as compared with unstrained QW and bulk devices.1-4 Among their expected characteristics are reduced threshold current,1,2 enhanced differential efficiency,1,2 enhanced characteristic temperature,1,2 reduced linewidth enhancement factor,3 and enhanced high-speed capabilities.

© 1991 Optical Society of America

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