Abstract

Parallel optical interconnections are attractive for high-speed computer data links. A monolithic receiver array is preferable to the parallel optical interconnections because of its small dimensions, uniformity, and small cross talk. A monolithic receiver array is also attractive for the wavelength-division multiplexing in long-haul optical fiber communications. Receiver arrays on both GaAs and InP substrates having fourc-channel inputs have already been realized.^1,2 An optoelectronic integrated receiver comprising pin photodiodes (PDs) and AlInAs/GaInAs high-electron-mobility transistors (HEMTs) is promising because of its excellent characteristics, such as the sensitivity and the bandwidth.^3,4 We can expect to realize a high-performance receiver array when using this technology.

© 1991 Optical Society of America