High-efficiency waveguide InGaAs P-I-N photodiode with bandwidth of greater than 40 GHz

Kazutoshi Kato; Susumu Hata; Atsuo Kozen; Jun-ichi Yoshida

doi:10.1364/OFC.1991.ThO4

Optical Fiber Communication
1991 OSA Technical Digest Series (Optica Publishing Group, 1991),
paper ThO4
•https://doi.org/10.1364/OFC.1991.ThO4

High-efficiency waveguide InGaAs P-I-N photodiode with bandwidth of greater than 40 GHz

Kazutoshi Kato, Susumu Hata, Atsuo Kozen, and Jun-ichi Yoshida

Optical Fiber Communication Conference 1991

San Diego, California United States
ISBN: 1-55752-166-2

From the session
Detectors (ThO)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
K. Kato, S. Hata, A. Kozen, and J. Yoshida, "High-efficiency waveguide InGaAs P-I-N photodiode with bandwidth of greater than 40 GHz," in Optical Fiber Communication, Vol. 4 of 1991 OSA Technical Digest Series (Optica Publishing Group, 1991), paper ThO4.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

The bandwidth-efficiency product of side-illuminated waveguide photodiodes (PD’s) is superior to that of surface-illuminated PDs,¹ and the waveguiding of the side-illuminated PD is also structurally convenient for integration.^2-4 To further the conceptual progress of these detectors, we have introduced separate-confinement double hetero structures (SCH’s), intentionally taking the structural analogy to lasers. The SCH waveguiding can significantly improve the fiber coupling and internal efficiency. The fabricated device has reached a bandwidth of over 40 GHz, keeping a remarkably high external quantum efficiency of about 44% for 1.55-μm light.

PDF Article

More Like This

Ultrafast Graded Double Heterostructure p-i-n Photodiode

Y. G. Wey, K. Giboney, D. L. Crawford, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich, and G. Y. Robinson
ThC3 Picosecond Electronics and Optoelectronics (UEO) 1991

High-speed GaInAs P-I-N photodiode with introduced layers to reduce series resistance fabricated by metal-organic vapor-phase epitaxy

K. Sakakibara, M. Wada, and Y. Sekiguchi
CThR34 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

100 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode

Yih-Guei Wey, Kirk S. Giboney, John E. Bowers, Mark J. W. Rodwell, Pierre Silvestre, Prabhu Thiagrarajan, and Gary Y. Robinson
A11 Ultrafast Electronics and Optoelectronics (UEO) 1993

Previous Article Next Article