High power laser-amplifier photonic integrated circuit for 1.48 micron wavelength operation

U. Koren; R. M. Jopson; B. I. Miller; M. Chien; M. G. Young; C. A. Burrus; C. R. Giles; G. Raybon; J. D. Evankow; B. Tell; K. Brown-Goebeler

doi:10.1364/OFC.1991.PD10

Optical Fiber Communication
1991 OSA Technical Digest Series (Optica Publishing Group, 1991),
paper PD10
•https://doi.org/10.1364/OFC.1991.PD10

High power laser-amplifier photonic integrated circuit for 1.48 micron wavelength operation

U. Koren, R. M. Jopson, B. I. Miller, M. Chien, M. G. Young, C. A. Burrus, C. R. Giles, G. Raybon, J. D. Evankow, B. Tell, and K. Brown-Goebeler

Optical Fiber Communication Conference 1991

San Diego, California United States
ISBN: 1-55752-166-2

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U. Koren, R. M. Jopson, B. I. Miller, M. Chien, M. G. Young, C. A. Burrus, C. R. Giles, G. Raybon, J. D. Evankow, B. Tell, and K. Brown-Goebeler, "High power laser-amplifier photonic integrated circuit for 1.48 micron wavelength operation," in Optical Fiber Communication, Vol. 4 of 1991 OSA Technical Digest Series (Optica Publishing Group, 1991), paper PD10.

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Abstract

Laser-amplifier photonic integrated circuits (PIC’s) with high coupling efficiency between the laser and amplifier elements, using the InP material system, have been described previously [l-3]. Surface emitting laser amplifier devices have also been reported in the GaAs system using second order Bragg reflector gratings [4]. In the present work we describe a strained layer MQW laser-amplifier PIC intended for use as a high power source for pumping erbium doped fiber amplifiers (EDFA’s) at 1.48 micron wavelength. Multiple quantum well (MQW) optical amplifiers have extremely high saturation output powers [5,6], making them very suitable for high power applications.

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