Abstract
This paper describes an integrated InGaAsP/InP asymmetric Y- junction that has a low excess loss, negligible optical reflection, and polarization independent power dividing ratio. The Y-junction was integrated with an active optical gain section by metal-organic chemical vapor deposition (MOCVD). We also present a theoretical analysis of the Y-junction which explains the observed experimental results.
© 1990 Optical Society of America
PDF ArticleMore Like This
K.-Y. LIOU, U. KOREN, M. ORON, E. C. BURROWS, B. I. MILLER, M. YOUNG, G. RAYBON, and C. A. BURRUS
CFD7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990
Kuanping Shang, Shibnath Pathak, Binbin Guan, Guangyao Liu, Shaoqi Feng, and S. J. B. Yoo
Tu3E.3 Optical Fiber Communication Conference (OFC) 2016
Masaru Zaitsu, Takuo Tanemura, Akio Higo, and Yoshiaki Nakano
OTh4I.3 Optical Fiber Communication Conference (OFC) 2013