Abstract

The integration of active laser devices with transparent waveguides is an important capability for the realization of III—V advanced optoelectronics. Impurity-induced disordering (IID) has demonstrated its utility in the formation of buried heterostructure lasers,¹ and recently there has been work studying the optical waveguiding properties of the waveguides formed by IID.^2,3 We present results on a dual-cavity laser with the cavities coupled by a low-loss waveguide. The entire structure is planar, and both the buried heterostructure gain region and the waveguide region are readily fabricated using IID techniques. Figure 1 shows the overall structure of the device. In the waveguide region, the IID enabling Si diffusion has been allowed to disorder the entire active region beneath a masking stripe.

© 1988 Optical Society of America