Abstract
The InGaAlAs/InP material system is an alternative to InGaAsP/InP for a wide range of optoelectronic components. For the MBE growth technique, which offers very large areas of well-controlled uniform defect-free material, InGaAIAs is preferred to InGaAsP because the presence of only one group V element alleviates some of the growth problems. This paper reports, for the first time we believe, low-loss optical waveguides made using the ternary In0.52Al0 48As lattice matched to InP.
© 1987 Optical Society of America
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