Surface emitting GaAlAs/GaAs laser with Ith= 6 mA

S. KINOSHITA; K. IGA

doi:10.1364/OFC.1987.THF5

Optical Fiber Communication
1987 OSA Technical Digest Series (Optica Publishing Group, 1987),
paper THF5
•https://doi.org/10.1364/OFC.1987.THF5

Surface emitting GaAlAs/GaAs laser with I_th= 6 mA

S. KINOSHITA and K. IGA

Optical Fiber Communication Conference 1987

Reno, Nevada United States
ISBN: 0-936659-61-0

From the session
Optoelectronic integrated Circuits: 2 (THF)

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S. KINOSHITA and K. IGA, "Surface emitting GaAlAs/GaAs laser with Ith= 6 mA," in Optical Fiber Communication, 1987 OSA Technical Digest Series (Optica Publishing Group, 1987), paper THF5.

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Abstract

A fabricated GaAlAs/GaAs surface emitting (SE) laser is shown in Fig. 1, based on a circular buried heterostructure (CBH) by the selective meltback method.¹

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