Abstract

Wavelength division multiplexing systems are intensively studied for higher transmission rates, in which 1.2-μm lasers as well as 1.3-μm lasers play an important role. So far, 1.2-μm lasers have a problem of poor temperature characteristics supposedly due to the smaller diffusion potential difference between main current path and leakage path. We have developed a 1.2-μm InGaAsP p-substrate buried crescent (PBC) laser with superior high temperature, high-power operation, and high- frequency response.

© 1986 Optical Society of America

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