There has been a strong demand for short-wavelength (λ = 0.7-0.9-μm) distributed feedback (DFB) lasers for application to short-distance wavelength-division-multiplexed (WDM) networks, fiber-optic sensors, laser printers, optical disk memory systems, and GaAs integrated optoelectronic circuits (IOECs). However, a practicable AlGaAs/GaAs DFB laser has not yet been found, because regrowth on the corrugated AlGaAs surface is difficult by conventional liquid phase epitaxy (LPE) due to its oxidation and melt-back problems.

© 1986 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription