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Direct modulation and active mode-locking of ultrahigh-speed GaAIAs lasers at frequencies up to 18 GHz

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Abstract

Significant progress has been made recently in operating semiconductor laser diodes at very high frequencies. Development of ultrafast semiconductor laser diodes1 has extended the −3-dB direct modulation bandwidth to above 10 GHz. This has opened a wide range of application concerning transmission of lower X-band (4–12-GHz) microwave signals using optical fiber links. Major interest exists in microwave signal transmission in the upper X-band (12–20-GHz) range usually over a relatively narrow bandwidth (for example, in military or civilian radar systems). The present work will show that the recently developed ultrafast window buried heterostructure laser (BH on SI) can be used for this purpose, with satisfactory noise and intermodulation characteristics even at such a high-frequency range.

© 1985 Optical Society of America

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