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Conferences > OFC > 1983 > MJ > MJ3

High-speed GaAs heterojunction phototransistor grown by molecular beam epitaxy

D. Ankri, W. J. Schaff, J. A. Barnard, S. Ralph, and L. F. Eastman

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Abstract

A multilayer heterojunction phototransistor (HPT) structure has been grown by molecular beam epitaxy (MBE) with a double-base structure. The first base region close to the AlxGa1−xAs emitter layer is AlyGa1−yAs with y < x (x = 30%, Y ≃ 12%), Be-doped p ≃ 1017 cm−3. The second base region 1000 Å thick is GaAs Be-doped 1019 cm−3. The aluminum mole fraction ratio is graded between the emitter and AlyGa1−yAs base region. The interface between the two base regions is abrupt.

© 1983 Optical Society of America

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