Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Buried heterostructure 1.3-µm lasers with multiple layer infill

Not Accessible

Your library or personal account may give you access

Abstract

This paper reports on the preparation and performance of BH 1.3-µm lasers which have a novel sixty-layer InP infill on either side of the mesa stripe. A typical SEM of a cleaved and stained device is shown in Fig. 1.

© 1981 Optical Society of America

PDF Article
More Like This
Low threshold 1.3-µm GaInAsP/InP buried heterostructure lasers by liquid-phase epitaxy and metal-organic chemical vapor deposition

Willie Ng, C. S. Hong, H. Manasevit, and P. D. Dapkus
TUD1 Optical Fiber Communication Conference (OFC) 1981

InGaAsP planar buried heterostructure laser diode for optical communications

I. Mito, K. Kaede, M. Kitamura, K. Kobayashi, and S. Matsushita
TUA3 Optical Fiber Communication Conference (OFC) 1981

Threshold Reduction of 1.3 μm GaInAsP/InP Surface Emitting Laser by a Maskless Circular Planar Buried Heterostructure Regrowth

T. Baba, K. Suzuki, Y. Yogo, K. Iga, and F. Koyama
QThA.2 Quantum Optoelectronics (QOE) 1993

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.